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High-electron-mobility transistor

Der high-electron-mobility transistor (HEMT, dt. »Transistor mit hoher Elektronenbeweglichkeit«) ist eine spezielle Bauform des Feldeffekttransistors für sehr hohe Frequenzen und ist von der Konstruktion her eine spezielle Bauform eines JFETs.
Andere Bezeichnungen für diesen Transitortyp sind modulation-doped field-effect transistor (MODFET), two-dimensional electron-gas field-effect transistor (TEGFET), selectively-doped heterojunction transistor (SDHT) und heterojunction field-effect transistor (HFET).

Alle High-electron-mobility transistor

ATF-36077
(2-18 Ultra Noise Pseudomorphic HEMT )
Agilent(Hewlett-Packard)
ATF-36163
(1.5-18 Surface Mount Pseudomorphic HEMT )
Agilent(Hewlett-Packard)
MGF4951
(SUPER NOISE InGaAs HEMT )
Mitsubishi Electric Semiconductor
ATF501P8
(Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT LPCC Package )
HP[Agilent(Hewlett-Packard)]
ATF55143
(Agilent ATF-55143 Noise Enhancement Mode Pseudomorphic HEMT Surface Mount Plastic Package )
HP[Agilent(Hewlett-Packard)]
ATF54143
(Noise Enhancement Mode Pseudomorphic HEMT Surface Mount Plastic Package )
AGILENT
ATF-38143-
(Noise Pseudomorphic HEMT Surface Mount Plastic Package )
HP[Agilent(Hewlett-Packard)]
ATF-35143-BLK
(TRANSISTOR,HEMT,N-CHAN,5.5V V(BR)DSS,40MA I(DSS),SOT-343R )
Agilent Technologies
ATF-331M4-
(Agilent ATF-331M4 Noise Pseudomorphic HEMT Miniature Leadless Package )
HP[Agilent(Hewlett-Packard)]
ATF-52189-BLK
(Enhancement Mode Pseudomorphic HEMT Package )
Agilent(Hewlett-Packard)

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